Energy levels of nitrogen isoelectronic impurities in AlxGa1minus;xAs

摘要

Energy levels of nitrogen isoelectronic impurities in AlxGa1minus;xAs doped with 1018N cmminus;3by ion implantation were determined from the photoluminescence measurements at 2thinsp;deg;K. Three bound states associated with nitrogen impurities are situated below theX1conductionhyphen;band minima and the binding energies of the excitons bound to the states decrease with increasing composition ratiox.