New representatives with BaAl_4, La_3Al_(11) and BaHg_(11) structure types from the R-Zn-Ga systems {R = Y, Lu, Gd-Tm)

摘要

Fifteen new ternary RZn_(2-x)Ga_(2+x), R_3Zn_(11-x)Ga_x and RZn_(11-x)Ga_x (R = y, Lu, Gd-Tm) compounds have been synthesized by reacting the elements at 960 °C, followed by annealing at 400 °C The crystal structure of all the compounds was solved from powder X-ray counter data and their compositions were confirmed by EDS analysis. Additionally, single crystal X-ray diffraction studies were also performed for the DyZn_(8.6)Ga_(2.4) phase. It was found that the new compounds crystallize with BaAl_4, La_3Al_(11) and BaHg_(11) structure types, respectively.