A molecular effect of hydrogen trapping in the implantation of molecular hydrogen ions into aluminum and aluminum oxide

摘要

Molecular effects of hydrogen trapping are examined for the implantation of H+2and H+3molecular ions into aluminum and aluminum oxide. It was found that the H+3bombardment enhances trapping efficiencies more than H+2by a factor of 2.7 for Al and 4.3 for Al2O3. These results indicate the importance of the interaction between hydrogen and vacancy clusters.