Tailoring the birefringence in a verticalhyphen;cavity semiconductor laser

摘要

We demonstrate a technique to modify the strain in a planar verticalhyphen;cavity semiconductor laser. The technique consists of locally melting a hole in the wafer next to the device by means of a focused laser beam. This allows manipulating both the magnitude and the orientation of the native birefringence in a permanent way. copy;1996 American Institute of Physics.