Selective deposition of diamond crystals by chemical vapor deposition using a tungstenhyphen;filament method

摘要

Selective deposition of polycrystalline and singlehyphen;crystal diamonds has been achieved on a silicon wafer by chemical vapor deposition from CH4and H2gases using a hothyphen;filament method. The nucleation of diamonds occurs selectively at the sites fabricated by successive roughening and patterned etching of wafers.