AbstractA new alkali‐developable organosilicon positive excimer laser (KrF) resist (OSPR‐2016) has been developed for a bilayer resist system. OSPR‐2016 is composed of poly(p‐hydroxybenzylsilsesquioxane) and methyl cholate‐tris (α‐diazoacetoacetate). The ratio is 72.5 : 27.5 w/w. A sample of 0.5‐μ thick OSPR‐2016 resolved 0.35 μ LS patterns when exposed to a dose of 320 mJ/cm2from an excimer laser projection p
展开▼