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首页> 外文期刊>journal of applied polymer science >Study on organosilicon positive resist. III. Organosilicon positive excimer laser resist (OSPR‐2016)
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Study on organosilicon positive resist. III. Organosilicon positive excimer laser resist (OSPR‐2016)

机译:Study on organosilicon positive resist. III. Organosilicon positive excimer laser resist (OSPR‐2016)

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AbstractA new alkali‐developable organosilicon positive excimer laser (KrF) resist (OSPR‐2016) has been developed for a bilayer resist system. OSPR‐2016 is composed of poly(p‐hydroxybenzylsilsesquioxane) and methyl cholate‐tris (α‐diazoacetoacetate). The ratio is 72.5 : 27.5 w/w. A sample of 0.5‐μ thick OSPR‐2016 resolved 0.35 μ LS patterns when exposed to a dose of 320 mJ/cm2from an excimer laser projection p

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