Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

摘要

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a twohyphen;state optical memory is demonstrated.