The metallizations of AuGeNi/GaAs(001) and Au/GaAs(001) contacts at 4times;10minus;3Pa and 7times;108Pa pressure have been analyzed by using xhyphen;ray diffraction, transmission electron microscopy, and scanning electron microscopy. Our observations show that the highhyphen;pressure ambient inhibits the As sublimation loss and that only interdiffusion takes place without any formation of compounds in those contacts annealed in argon at 7times;108Pa. The experimental results are also discussed on the basis of phase diagrams.
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