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>Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
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Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
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机译:Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
Annealing of metastable dangling bond defects in lighthyphen;soaked undoped hydrogenated amorphous silicon (ahyphen;Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.
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