Switching kinetics in KNO3ferroelectric thinhyphen;film memories

摘要

The time dependence of the current transienti(t) produced by the reversal of domains in ferroelectric potassium nitrate thinhyphen;film memories of 75ndash;300 nm is analyzed as a function of temperature and of thickness using the Avrami theory. For all the films the kinetics confirm the lowhyphen;dimensional nature of the system