A BARIUM ZIRCONATE TITANATE-BASED INORGANIC DIELECTRIC MATERIAL WITH HIGH PERMITTIVITY AS A LEAD-FREE INSULATOR FOR SEMICONDUCTOR APPLICATIONS

摘要

BaZr_xTi_(1-x)O_3-Ba(Fe_(0.5)Ta_(0.5))O_3-FeTaO_4(BZT-BFT-Fr) ceramics were fabricated by a columbite route in an attempt to develop a lead-free inorganic dielectric material suitable for use as an insulating material with high relative permittivity and low dielectric loss for next-generation system-on-package (SOP) applications. The fabricated BZT ceramics with compositions of BaZr_xTi_(1-x)O_3 with x =0.05-0.30 all had a single-phase perovskite structure. The sample with 20/80 composition (100x /(100-100x)) in BaZr_xTi_(1-x)O_3) exhibited the best dielectric properties with an ideal Curie temperature of 30 deg C, high relative permittivity of 4750, and low dielectric loss of 0.6 percent at 1 MHz. The addition of BFT as a depressor agent and FT as a sintering aid, at optimal concentrations of y = 0.03 ((l-y)BZT-yBFT) and 0.5 mass percent FT, yielded ceramics with e, of 3080 and tan delta of 0.05 percent at 1 MHz. This novel lead-free inorganic dielectric material can therefore be expected to be useful as an inorganic insulating material with high permittivity for SOP applications.