Mass Productive Metallization Process for 1.6 V Operational FRAM using Al-1 Plate Line with New Technology

摘要

We have developed new BEOL technologies for mass-productive FRAM embedded smart card from which better device productivity was obtained. We have changed previous Al-2 plate line to new Al-1 plate line to improve bad step coverage of Al-2 plate line arising from deep via contact. Additional integration related damage on PZT capacitor by using Al-1 plate line scheme has been prevented by introducing new inter metallic dielectric (IMD) layer and new anneal process. As a result, a mass productive 1.6 V operational FRAM embedded smart card has been successfully demonstrated by the new Al-1 plate line BEOL technology.