A Novel Self-Adaptive Wordline Voltage Generator for High Operational Reliability in Phase Change Memory

摘要

This paper presents a novel self-adaptive wordline voltage generator for phase change memories. It is based on a feedback loop which modulates the output resistance of the select MOS transistors to compensate the voltage drop across the bitline distributive resistance. Simulation results show that very effective compensation is achieved, with the reset current kept constant at the desired value for memory cells located at different rows.