We report on highhyphen;power AlGaAs/GaAs gradedhyphen;index single quantum well surfacehyphen;emitting lasers (SELs), with etched vertical mirrors and integrated 45deg; beam deflectors fabricated by a tilted ion beam etching technique. 100hyphen;mgr;mhyphen;wide, 500hyphen;mgr;mhyphen;long, broadhyphen;area SELs exhibited a threshold current of 300 mA, a peak power of more than 380 mW, and an external differential quantum efficiency of 17percnt; without facet coating. The SELs showed stable operation up to 7th. These results show the highest power and external differential quantum efficiency reported to date for 45deg; beam deflecting SELs. The full widths at half maximum of the surfacehyphen;emitting farhyphen;field pattern parallel and perpendicular to the laser axis were 8.5deg; and 14deg;, respectively.
展开▼
