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Preparation of PLZT Ferroelectric Films by RF Sputtering on 200mm phi Substrate

机译:在200mm phi衬底上通过射频溅射制备PLZT铁电薄膜

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摘要

(Pb, La)(Zr, Ti)O_3 (PLZT) thin films were deposited on 200mm phi Pt/Ti/SiO_2/Si substrates by RF magnetron Sputtering using multichamber production system. The Pb content in PLZT films deposited at low temperature was measured by X-ray fluorescence spectroscopy (XRF), and ferroelectrics properties were measured. Good uniformities of Pb content and deposition rate were achieved on 200mm phi) substrate. For ferroelectrics properties, only small deference was observed between the center and the edge of 200mm phi) substrate.
机译:利用多腔室生产系统通过射频磁控溅射在200mmΦPt / Ti / SiO_2 / Si衬底上沉积(Pb,La)(Zr,Ti)O_3(PLZT)薄膜。通过X射线荧光光谱法(XRF)测量在低温下沉积的PLZT膜中的Pb含量,并测量铁电性能。在200mmφ)衬底上实现了良好的Pb含量和沉积速率均匀性。对于铁电特性,仅在200mmφ)基板的中心和边缘之间观察到很小的偏差。

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