Diamond growth is observed on diamondhyphen;abraded single crystal Si(111) substrates from a 99.3percnt;H2/0.7percnt;CO gas mixture at a total pressure of 8 Torr. The gas mixture is reacted by using 193 nm irradiation from an ArF excimer laser. Multiphoton dissociation of CO takes place via thea3Pgr; state, with subsequent chemical reactions between C and O fragments and hydrogen. Of importance is the fact that we observe significant diamond particle growth within a period of 1 h on unheated substrates. This research represents the first known effort where diamond growth is observed at room temperature.
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