Roomhyphen;temperature InAsxSbyP1minus;xminus;ylighthyphen;emitting diodes for CO2detection at 4.2 mgr;m

摘要

By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate lighthyphen;emitting diodes which emit near 4.2 mgr;m at room temperature, corresponding to the fundamental absorption of CO2gas.