Reliability of a dynamic random access memory (dram)

摘要

AbstractThe occurrence of electronic failures during high temperature stress testing, and their recovery at ambient, represents one of the most difficult problems of reliability assessment. This paper examines one such failure on a dynamic random access memory (DRAM) module and gives an analysis of its nature. In addition, a suggestion as to how to assess the impact of such failures in the field situation is given and its specific application to this problem used to make a field reliability prediction.