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首页> 外文期刊>Journal of optical technology >Photoluminescence and photoconductivity of a thin film of oxidized nanoporous silicon doped with erbium ions
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Photoluminescence and photoconductivity of a thin film of oxidized nanoporous silicon doped with erbium ions

机译:掺杂铒离子的氧化纳米多孔硅薄膜的光致发光和光电导率

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This paper presents the results of an investigation of the photoluminescence and photoconductivity of a thin film of oxidized nanoporous silicon doped with erbium ions. Structural studies showed that silicon clusters of spherical shape and sizes from 5 to 15 nm are present in the layer. Investigation of the photoluminescence spectra showed that they include intense peaks characteristic of the luminescence of erbium ions. Study of the spectral dependences of the photoconductivity revealed that the nanocomposite under investigation has a complex system of the energy distribution of the traps responsible for the photostimulated generation and recombination of minority charge carriers. (C) 2015 Optical Society of America.
机译:本文介绍了掺杂铒离子的氧化纳米多孔硅薄膜的光致发光和光电导率的研究结果。结构研究表明,该层中存在球形和尺寸为 5 至 15 nm 的硅团簇。对光致发光光谱的研究表明,它们包括铒离子发光特征的强峰。对光电导率的光谱依赖性的研究表明,所研究的纳米复合材料具有复杂的陷阱能量分布系统,负责少数电荷载流子的光刺激产生和复合。(C) 2015年美国光学学会。

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