Voltagehyphen;tunable dualhyphen;mode operation InAlAs/InGaAs quantum well Infrared photodetector for narrowhyphen; and broadband detection at 10 mgr;m

摘要

A new photoconductive (PC) and photovoltaic (PV) dualhyphen;mode operation quantum well infrared photodetector using a latticehyphen;matchednhyphen;type In0.52Al0.48As/In0.53Ga0.47As system has been developed for both the narrowhyphen;band (Dgr;lgr;/lgr;p=7percnt;) and broadband (Dgr;lgr;/lgr;p=24percnt;) detection with a peak spectral response around lgr;p=10 mgr;m. The detection scheme utilizes a voltagehyphen;tuned boundhyphen;tohyphen;miniband transition from the ground state in the In0.53Ga0.47As(110 Aring;) quantum well to the global miniband states in the InAlAs/InGaAs superlattice barrier layers. The detectivityDast;lgr;for the PV mode operation was found to be 5.7times;109cmthinsp;sqrt;Hz/W at lgr;p=10 mgr;m andT=67 K, whileDast;lgr;for the PC mode operation was found to be 5.8times;109sqrt;Hz/W atVb=0.5 V, lgr;p=10.3 mgr;m, andT=67 K.