Period doubling in directly modulated InGaAsP semiconductor lasers

摘要

We report on period doubling in a directly modulated InGaAsP semiconductor laser at 1.3 mgr;m. This behavior is obtained for modulation frequencies betweenfrand 1.6fr, wherefris the laser resonant frequency measured under weak current modulation. The domain of period doubling as well as the time responses of the optical output is well interpreted using a rate equation model.