At the initial stage of 3C-SiC growth on Si(OO1) using organosilicon compounds such as monomethylsilane and dimethylsilane, the c(4×4) was formed before the nucleation of SiC islands. By the observation on the c(4×4) formed surface by scanning tunneling microscopy (STM), it was found that both c(4×4) domains and (2×1) domains coexisted. From the estimation of the lattice constant for these structures by lineprofile measurement, it was confirmed that the c(4×4) domain was contracted and to be preferential site for SiC nucleation. The STM observation of the c(4×4) also revealed that the c(4×4) domain consisted of α-cell and β-cell similar to the results reported so far.
展开▼
