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首页> 外文期刊>Indian journal of engineering and materials sciences >Design of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system
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Design of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system

机译:基于低相位噪声InGaP / GaAs HBT的差分Colpitts VCO的干扰消除系统设计

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This paper presents design, fabrication and characterization of two differential Colpitts voltage controlled oscillator (VCOs) - cross-coupled VCO (CC-VCO) and double cross-coupled VCO (DC-VCO) - in InGaP/GaAs HBT technology. Their main parameters like the oscillation frequency, output power and phase noise performance are measured and compared with other recently published studies. In the cores of two VCOs, two switching transistors are introduced to steer the core bias current to save power. An LC tank with higher inductor quality factor (Q) is used to generate oscillation frequency. The differential CC-VCO exhibited a superior phase noise characteristics of-130.12 dBc/Hz at 1 MHz from the carrier frequency (1.566 GHz) when supplied with a control voltage of 0 volt. In the same way, the differential DC-VCO achieved -134.58 dBc/Hz at 1 MHz from the carrier frequency (1.630 GHz) with the same control voltage. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range. It is concluded that the faster switching action of InGaP/GaAs HBT transistors exhibited the excellent phase noise characteristics.
机译:本文介绍了InGaP / GaAs HBT技术中两个差分Colpitts压控振荡器(VCO)的设计,制造和特性-交叉耦合VCO(CC-VCO)和双交叉耦合VCO(DC-VCO)。测量了它们的主要参数,例如振荡频率,输出功率和相位噪声性能,并与其他最近发表的研究进行了比较。在两个VCO的内核中,引入了两个开关晶体管来控制内核偏置电流以节省功耗。具有较高电感品质因数(Q)的LC储能器用于产生振荡频率。当提供0伏的控制电压时,差分CC-VCO在距载波频率(1.566 GHz)1 MHz处表现出-130.12 dBc / Hz的出色相位噪声特性。以相同的方式,在相同的控制电压下,差分DC-VCO在距载波频率(1.630 GHz)1 MHz处达到了-134.58 dBc / Hz。在振荡电路中使用了两对片上基极集电极(BC)二极管,以增加VCO调谐范围。结论是,InGaP / GaAs HBT晶体管的较快开关动作表现出优异的相位噪声特性。

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