We have prepared thin diamond films by microwave assisted plasma chemical vapour deposition (MWCVD) and hot filament chemical vapour deposition (HFCVD). Diamond powder pre-treatment of the silicon substrates or bias potential were used for nucleation enhancement. Doping of the films was carried out in two ways: in-situ during the CVD process or after the deposition by ion implantation. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been applied to characterize the morphology and texture. Electron energy-loss spectroscopy in transmission was then used to investigate the electronic structure of the diamond films as a function of the preparation parameters and the doping level.
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