Separation of partition noise from generationhyphen;recombination noise in a threehyphen;terminal quantum well infrared photodetector

摘要

In this letter, we present results from our systematic study of the low frequency noise in an infrared hothyphen;electron transistor. By measuring the correlation between emitter and collector noise currents, we are able to separate the partition noise and the generationhyphen;recombination (ghyphen;r) noise present in this three terminal device. Through the whole current range of more than two decades, the collector current noiseSIcis always much larger than the crosshyphen;spectrum density between emitter and collector currentsSIeIc. We thus conclude thatSIccomes mostly from the filtering process. copy;1996 American Institute of Physics.