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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing
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Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

机译:Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

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摘要

Sensing and detecting gases are crucial from the application point of view. The essential condition for present-time gas sensors is light, compact, less power dissipation, highly sensitive, thermally stable, and a good selection regards several gases. Due to the significant potential and modulation of the energy bandgap, two-dimensional material has recently attracted researchers attention. Graphene nanoribbon (GNR) is one of the candidates from the two-D material; it is extracted from the strip of one-dimensional graphene material, which can be a suitable contender for gas sensing devices. Therefore, in this work, the detailed investigation of the gas sensor of various gas has been reported by employing two-dimensional material-based DG-GNR VTFET as a sensor. Different gases, including Oxygen, Ammonia as well as Hydrogen gas, have been scrutinized for sensitivity and stability in several temperature ranges. In the present work, several catalytic metals are utilized in the gate electrode of the proposed device architecture for the different gas sensing applications. The intrinsic physics of the proposed gas sensor has been carried out in detail in the factor of different gas molecules and gas pressure. Finally, the temperature parameter varies to analyze the stability of the proposed device sensor within 200 K-400 K.

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