Structure optimization and investigation of electrical and optical characteristics of Alq(3)/TAZ:Ir(ppy)(3)-BCP/HMTPD OLED

摘要

In this article, the energy band structure of the Alq(3)/TAZ:Ir(ppy)(3)-BCP/HMTPD OLED has been optimized to understand the mechanism of EHPs (electron hole pairs) recombination and the light generation from the OLED. After optimizing the structure, the Langevin model has been applied in order to make the simulation for I-V and J-V characteristics, and charge densities against the applied voltages. In conclusive results, the threshold voltage was determined as similar to 3.25 Volt. In addition, the behaviours of reflected and transmitted lights with the variable ETL (electron transport layer) thicknesses in the optimized OLED have been discussed. With the discussion of input emission spectra of ETL and EML (emissive layer), a thorough analysis about recombination prefactor has been made successfully. The optimized OLED is an appropriate flexible light source for the emission of photons of similar to 560 nm wavelength.