We fabricated Fe-silicide nanodots (NDs) on an ultrathin SiO2layer and evaluated changes in electron transport properties with andwithout magnetic field application. High-density NDs with an areal densityas high as~1011 cm~(-2) were formed on thermally grown SiO2 by exposingultrathin Fe/Si-NDs structures to a remote H2 plasma without externalheating. In electron transport properties related to current-timecharacteristics for a diode with Fe electrode and charging energy to NDs,clear changes in current levels through NDs and electron injectionmodulation of NDs depending on intensity of magnetic fields wereobserved.
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