AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

Andrew H. Jones; Stephen D. March; Adam A. DadeyAaron J. MuhowskiSeth R. BankJoe C. Campbell

首页> 外文期刊>IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society >AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

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AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

机译：AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

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摘要

We report AlInAsSb separate absorption, charge, and multiplication (SACM) avalanche photodiodes with a >3- μm optical cutoff, operating at 240 K. Gain and dark current performance further improve with reduced temperature. 65 external quantum efficiency at 2- μm is achieved without anti-reflection enhancement.

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《IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society》 |2022年第4期|4500306-1-4500306-6|共6页
作者
Andrew H. Jones; Stephen D. March; Adam A. DadeyAaron J. MuhowskiSeth R. BankJoe C. Campbell;
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作者单位

Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, USA;

Electrical and Computer Engineering Department, The University of Texas at Austin, Austin, TX, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类计量学;
关键词
Avalanche photodiodes; photodetectors; infrared; mid-infrared;

AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

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