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Dielectric properties of PMMA/KCTO(H) composites for electronics components

机译:PMMA/KCTO(H)复合材料在电子元件中的介电性能

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摘要

Polymethyl methacrylate/hollandite-like copper doped potassium titanate high-k ceramics composites with different filler content (20-60 vol.) are prepared by simple method of mixing of the polymer solution and ceramics dispersion followed evaporation of the solvent and hot pressing. The particle morphology and size are estimated by SEM. The composites obtained are studied by XRD, FTIR, and TGA methods. The influence of the additive and the concentration of hollandite-like copper doped potassium titanate high-k ceramics on dielectric properties (permittivity, conductivity, dielectric loss tangent) are investigated at frequency range from 10(-1) to 10(6) Hz. It is shown that the increasing of ceramics concentration cause the increasing of main dielectric characteristics, namely permittivity up to 40 and dielectric loss up to 0.13 at 60 vol. of filler and 0.1 Hz. Conductivity percolation threshold for PMMA/KCTO(H) composites was estimated (v(c) = 0.0773 vol. 20.9 wt. ). Experimental data on permittivity are compared with different theoretical models (Lichtenecker's model and the Effective Medium Theory model).
机译:采用聚合物溶液和陶瓷分散液混合后溶剂蒸发和热压法制备了不同填料含量(20-60 vol.%)的聚甲基丙烯酸甲酯/类荷兰石掺杂铜钛酸钾高k陶瓷复合材料。颗粒形态和大小通过SEM估计。通过XRD、FTIR和TGA方法对所得复合材料进行了研究。研究了在10(-1)至10(6) Hz频率范围内,添加剂和类荷兰石掺杂钛酸钾高k陶瓷浓度对介电性能(介电常数、电导率、介电损耗角正切)的影响.结果表明,陶瓷浓度的增加导致主要介电特性的增加,即在填料60 vol.%和0.1 Hz时介电常数高达40,介电损耗高达0.13。将介电常数的实验数据与不同的理论模型(Lichtenecker模型和有效介质理论模型)进行了比较。

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