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首页> 外文期刊>Journal of Applied Physics >Manipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure
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Manipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure

机译:Manipulation of magnetic anisotropy by voltage induced strain in Co2MnAl/PMN-PT heterostructure

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摘要

We have investigated the effect of an external electric field on the magnetic properties of Co2MnAl thin films deposited on a lead magnesium niobate-lead titanate (PMN-PT) (011) substrate. Stain-induced magnetoelectric coupling affects the magnetic properties of the Co2MnAl/PMN-PT system. The piezo-strain induced by applying an external field normal to the surface induces only in-plane strain, which leads to the rotation of easy-axis orientation of Co2MnAl from 100 to 011¯ direction. The remanent magnetization states and coercivity of the Co2MnAl film vary significantly and asymmetrically with the applied voltage due to anisotropic strain originating from PMN-PT. Electrical control of magnetic anisotropy in a Co2MnAl Heusler compound at room temperature will be of interest for realizing next-generation magnetoelectric random access memory devices.

著录项

  • 来源
    《Journal of Applied Physics 》 |2022年第10期| 103901-1-103901-8| 共8页
  • 作者单位

    Institute of Nanotechnology, Gebze Technical University;

    Department of Physics, Yildiz Technical University;

    Department of Physics, Gebze Technical University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学 ;
  • 关键词

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