This research disclosure relates to components for a lithographic system. In particular, it may relate to components for an extreme ultraviolet (EUV) lithographic system that comprises an EUV radiation source. (Photo)lithography is a process of transferring a pattern to a radiation-sensitive substrate by exposing the substrate to radiation having the pattern. Radiation used in a lithographic apparatus may be extreme ultraviolet (EUV). EUV radiation has a wavelength in the range 4 - 20 nm, for example 13.5 nm. The pattern is imparted to the radiation by directing a radiation beam to a patterning device (known as a reticle) which imparts a pattern to the radiation beam. One or more reticle masking blades (referred to as blades) are positioned close to, but slightly out of the plane of, the patterning device. The blades are positionable to block a portion of the radiation beam, thereby defining the region of the patterning device illuminated by the radiation beam. Typically, four blades are used, each extending in a plane parallel to the plane of the patterning device and positioned to block a portion of the radiation beam, thereby defining one edge of a rectangular region illuminated by the radiation beam.
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