IN FLU ENCE OF ELEC TRO MAG NETIC POL LU TION OF THE ELEC TRON BEAM GEN ER A TOR AND HIGH-EN ERGY RA DIO AC TIVE SOURCE ON THE MEM ORY COM PO NENTS

摘要

The study considers the impact of the environmental contamination by the electromagnetic radiation of electron beam generator and high-energy radioactive source on the memory compo nents. Elec tron beam gen er a tor can be used for in ject ing par ti cle en ergy into the plasma of the fu sion sys tem based on a Marx gen er a tor, while ra dio ac tive source as a sim u la tor of high-energy ionizing radiation that can be caused by the neutron-induced activation of plasma surrounding structures or released from deuterium-tritium fusion reaction. The effects of gamma ra di a tion of high-en ergy ra dio ac tive source and elec tric field of the elec tron beam gen er a tor on EPROM and EEPROM semi con duc tor com puter mem ory, were in ves ti gated. An older mem ory types were de lib er ately cho sen for the rea son that their more ro bust con struc tion will better pro tect them from the ef fects of ion iz ing and non-ion iz ing ra di a tion. The re sults ob tained un der well-con trolled con di tions show a high de gree of non-re sis tance of the semiconductor technology to the expected electromagnetic pollution of the electron beam gen er a tor and high-en ergy ra dio ac tive source. This con clu sion raises doubts on the pos sibility of simultaneous application of electron beam generator, consequently fusion system and nanotechnologies with the in creas ing need for min ia tur iza tion of elec tronic com po nents. memory component