Room-Temperature Multi-Beam, Multi-Wavelength Bound States in the Continuum Laser

摘要

A highly polarized multi-beam, multi-wavelength Ⅲ–Ⅴ semiconductor laserbased on the concept of bound states in the continuum (BIC) is reported.By utilizing destructive interferences of guided-mode resonances in anactive slab supported by a grating structure, both symmetry-protected andaccidental BIC resonances are created within the gain spectrum of InGaPmulti-quantum wells and achieve lasing in these modes simultaneously. Welldefinedmulti-lasing beams at different wavelengths (i.e., 664.9 nm @ 0.2°,656.4 nm @ 2.5°, 646.4 nm @ 5.1°, and 636.7 nm @ 7.6°) with transversemagnetic polarization can be obtained in a single device operating at roomtemperature. Furthermore, the lasing wavelengths can be precisely tuned bychanging the grating parameters. The laser concept presented in this paperis promising for applications in highly directional surface-emitting lasers,optical communications, bio-sensing, and signal processing.