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>Improved dielectric and piezoelectric properties of Sm-doped Pb(Mg1/3Nb2/ 3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 ternary ferroelectric ceramics
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Improved dielectric and piezoelectric properties of Sm-doped Pb(Mg1/3Nb2/ 3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 ternary ferroelectric ceramics
Sm-doped Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT) binary ferroelectric ceramics has received extensive attention due to the excellent dielectric and piezoelectric properties. However, its Curie temperature (T-c) is greatly reduced by Sm doping and T-c is only 89 ? at the optimum piezoelectric coefficient. In this work, Sm-doped Pb(Mg1/3Nb2/3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 (Sm: PMN-PZN-PT) ternary ferroelectric ceramics near MPB were successfully manufactured and the crystal structure, microstructure and electric properties were investigated with respect to Sm doping content. A high piezoelectric coefficient of 870 pC/N and a high T-c of 146 ? were achieved simultaneously in PMN-PZN-PT ternary ceramics with 1 Sm doping content. In addition, the room temperature dielectric constant was greatly improved by Sm doping and the P-r, P-s and Ec values gradually decrease with the increase of Sm content. These results indicate that Sm-doped PMN-PZN-PT ceramics may be an attractive material for high performance piezoelectric device applications.
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