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首页> 外文期刊>CERAMICS INTERNATIONAL >Improved dielectric and piezoelectric properties of Sm-doped Pb(Mg1/3Nb2/ 3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 ternary ferroelectric ceramics
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Improved dielectric and piezoelectric properties of Sm-doped Pb(Mg1/3Nb2/ 3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 ternary ferroelectric ceramics

机译:Sm掺杂Pb(Mg1/3Nb2/ 3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3三元铁电陶瓷介电性能的改善

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Sm-doped Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT) binary ferroelectric ceramics has received extensive attention due to the excellent dielectric and piezoelectric properties. However, its Curie temperature (T-c) is greatly reduced by Sm doping and T-c is only 89 ? at the optimum piezoelectric coefficient. In this work, Sm-doped Pb(Mg1/3Nb2/3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3 (Sm: PMN-PZN-PT) ternary ferroelectric ceramics near MPB were successfully manufactured and the crystal structure, microstructure and electric properties were investigated with respect to Sm doping content. A high piezoelectric coefficient of 870 pC/N and a high T-c of 146 ? were achieved simultaneously in PMN-PZN-PT ternary ceramics with 1 Sm doping content. In addition, the room temperature dielectric constant was greatly improved by Sm doping and the P-r, P-s and Ec values gradually decrease with the increase of Sm content. These results indicate that Sm-doped PMN-PZN-PT ceramics may be an attractive material for high performance piezoelectric device applications.
机译:钽掺杂Pb(Mg1/3Nb2/3)-PbTiO3(PMN-PT)二元铁电陶瓷因其优异的介电和压电性能而受到广泛关注。然而,它的居里温度(T-c)因Sm掺杂而大大降低,T-c仅为89?在最佳压电系数下。本工作成功制备了Sm掺杂Pb(Mg1/3Nb2/3)O-3-Pb(Zn1/3Nb2/3)-PbTiO3(Sm: PMN-PZN-PT)三元铁电陶瓷,研究了Sm掺杂含量的晶体结构、微观结构和电学性能。870 pC/N 的高压电系数和 146 ?在Sm掺杂量为1%的PMN-PZN-PT三元陶瓷中同时实现。此外,Sm掺杂大大提高了室温介电常数,P-r、P-s和Ec值随着Sm含量的增加而逐渐降低。这些结果表明,Sm掺杂PMN-PZN-PT陶瓷可能是高性能压电器件应用的有吸引力的材料。

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