Controlling the accumulation regime in solid-state photodetectors

摘要

Methods of controlling the charge-accumulation regime in photodetector arrays have been classified. Differences in methods of controlling accumulation in CCDs and in CMOS structures are considered. A method for adapting the accumulation to the dynamics of the subject and a method for controlling the duration and phase of the accumulation when a distance is measured in a solid-state array system with active pulse illumination are proposed.