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首页> 外文期刊>IEICE Transactions on fundamentals of electronics, communications & computer sciences >Analytical Formulas of Output Waveform and Short-Circuit Power Dissipation for Static CMOS Gates Driving a CBC π Load
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Analytical Formulas of Output Waveform and Short-Circuit Power Dissipation for Static CMOS Gates Driving a CBC π Load

机译:Analytical Formulas of Output Waveform and Short-Circuit Power Dissipation for Static CMOS Gates Driving a CBC π Load

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摘要

As MOSFET sizes and wire widths become very small in resent years,influence of resistive component of inter- connects on the estimationof propagation delay and power dis- sipation can no longer beneglected. In this paper we present formulas of output waveform atdriving point and short-circuit power dissipation for static CMOSlogic gates driving a CBC π load. By representing the short-circuitcurrent and the current flowing in the resistance of a CBC π load bypiece-wise linear functions, a closed-form formula is derived.

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