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首页> 外文期刊>Asian Journal of Chemistry: An International Quarterly Research Journal of Chemistry >Preparation of Tetra-Tungstate Red Phosphors and Corresponding White Light-Emitting Diodes
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Preparation of Tetra-Tungstate Red Phosphors and Corresponding White Light-Emitting Diodes

机译:四钨酸盐红色荧光粉的制备及相应的白光发光二极管

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摘要

Eu~(3+)-activated tungstate phosphors, Ca9Gd_(2-x)Eu_xW4O_(24) (x = 0,0.2,0.4,0.6,0.8,1.0,1.2,1.4,1.6,1.8,2.0), were prepared by the conventional solid-state reaction method. A systematic and exhaustive study for their photoluminescent properties was made. The tungstate phosphors show intensely red emission under 395 and 465 nm light excitation and good Commission International de l'Eclairage (CIE) chromaticity coordinates, therefore can get high colour purity of red emission. Excellent thermal stability for luminescence can also be observed for the tungstate phosphors. Bright red light-emitting diodes (LEDs) and white light-emitting diodes (WLEDs) were fabricated with Ca9EU2W4O_(24) phosphor on ca, 395 nm-emitting InGaN chips and about 460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstate phosphor is suitable for application of near-UV (NUV) and blue InGaN-based WLEDs.
机译:Eu〜(3+)活化钨酸盐磷光体Ca9Gd_(2-x)Eu_xW4O_(24)(x = 0,0.2,0.4,0.6,0.8,1.0,1.2,1.4,1.6,1.8,2.0)的制备传统的固态反应方法。对它们的光致发光性质进行了系统和详尽的研究。钨酸盐磷光体在395和465 nm的光激发下显示出强烈的红色发射,并具有良好的国际照明委员会(CIE)色度坐标,因此可以获得高颜色纯度的红色发射。钨酸盐磷光体还可以观察到出色的发光热稳定性。用Ca9EU2W4O_(24)荧光粉分别在大约395 nm的InGaN芯片和大约460 nm的InGaN芯片上制造了亮红色发光二极管(LED)和白光发光二极管(WLED)。 LED的良好性能表明,钨酸盐磷光体适用于近紫外(NUV)和蓝色InGaN基WLED的应用。

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