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Effect of minor SiO_2 addition on the creep behavior of superplastic tetragonal ZrO_2

机译:微量SiO_2添加对超塑性四方ZrO_2蠕变行为的影响

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摘要

A sigmoidal stress-creep rate relationship appearing in tetragonal ZrO_2 drastically changes with SiO_2 addition, where silicon segregates along the grain boundaries and dissolves into the ZrO_2 grains. This change is completed with the precipitation of glass pockets though the creep rate gradually increases with increasing the volume fraction. The glass pockets merely increase the creep rate by accelerating grain boundary sliding (GBS) by the viscous flow of the glass phase. Although the silicon segregated along the grain boundaries may enhance GBS, the solute silicon seems to control the rate of creep. The solute silicon increases the rate of Nabarro-Herring creep by accelerating the lattice diffusivity of cations at low stresses but decreases the rate of GBS by inhibiting the accommodation process at high stresses.
机译:四方ZrO_2中出现的 S 形应力-蠕变速率关系随着添加SiO_2而发生巨大变化,其中硅沿晶界偏析并溶解到ZrO_2晶粒中。这种变化随着玻璃袋的沉淀而完成,尽管蠕变速率随着体积分数的增加而逐渐增加。玻璃腔只是通过玻璃相的粘性流动加速晶界滑动(GBS)来增加蠕变速率。尽管沿晶界偏析的硅可能会增强GBS,但溶质硅似乎控制了蠕变速率。溶质硅通过在低应力下加速阳离子的晶格扩散率来增加Nabarro-Herring蠕变的速率,但通过抑制高应力下的调节过程来降低GBS的速率。

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