Organic devices fabricated by wet process have attracted considerable interest because of their advantages in large-area device fabrication. The high performance of organic field-effect transistors (OFETs) fabricated from an annealing pentacene solution and organic transistors with solution-processed source/drain electrodes using metal nanoparticles3) have been reported. An additional advantage is that they are simple to fabricate on various kinds of substrates, including polymer and glass substrates. That is, their mechanical flexibility is one of the key advantages of the organic devices. The thiophene oligomers with high carrier mobility are candidates for realizing all-organic circuits on an active semiconductor layer. A high mobility of greater than 0.1 cm{sup}2/Vs can be obtained from oligothiophene transistors fabricated by dry process. On the other hand, soluble poly(3-alkylthiophene) is one of the promising materials for large-area devices. Various bipolar-type OFETs based on composites of p-type conducting polymers and n-type dyes have been fabricated by spin-coating. It is also of interest to examine the OFETs based on the composites of conducting polymers and dyes with the same thiophene backbone. The surface treatment is also effective way to improve the performance of OFETs. The polymer gate insulator with smooth roughness is one of key factors for realizing the flexible devices. It is very effective to apply the organic self-assembled layer such as octadecyltrichlorosiiane (OTS) for channel coating. In this study, we investigated the fabrication and characteristics of flexible OFETs based on the composites with the same backbone by spin coating.
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