To commercialize light-weight and flexible electronic devices such as paper-like electroluminescence displays, low-cost identification tags, it is necessary to fabricate the organic thin film transistors. In general, the device structure of organic thin film transistors (OTFTs) were applied to the conventional structure used in inorganic transistors such as metal-oxide-semiconductor field effect transistors (MOSFETs) with a lateral type configuration. However, organic transistors using organic semiconductors have several disadvantages of low current density, high operation voltage, and low operational speed due to their high resistivity and low carrier mobility. To improve their performance for practical applications of organic FETs (OFETs), it is necessary to develop new materials, new device processing, new device structures, and new evaluation methods. We have been studied on organic static induction transistor (OSITs) with a vertical type configuration for high- performance transistors. Recently, we fabricated OSITs based on pentacene thin film on flexible substrates and investigated their basic electrical characteristics. In this study, an OSITs were fabricated on indium-tin oxide (ITO) formed on glass substrate using the vacuum evaporation method under a substrate at room temperature. In this letter, we report its basic characteristics and the electrical characteristics of an inverter using the OSITs.
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