Unravelling the electromechanical coupling in a graphene/bulk h-BN heterostructure

摘要

The stacking heterostructure of graphene on bulk h-BN produces a moiré pattern with topographic corrugation. The corrugation of the moiré pattern expectantly induces a considerable curvature and a flexoelectric response, which calls for a detailed study. In this work, we used lateral force microscopy, a scanning technique to locally observe the moiré pattern and topographic corrugation. The curvature and flexoelectric potentials are derived from the measured topographic corrugation, revealing a huge curvature of ∼107 m−1 and a flexoelectric potential of ∼10 mV in the hexagonal domain wall region (∼3–4 nm) of the moiré pattern. In addition, the domain walls of the moiré pattern also generate a clear electromechanical and frictional response, arising from the corrugation-induced flexoelectric response. In summary, the results of this work provide insights into the understanding of the flexoelectricity in the graphene/bulk h-BN and its associated electromechanical coupling behavior in the moiré pattern of a van der Waals stacking heterostructure.