High-average-power self-starting mode-locked Ti:sapphire laser with a broadband semiconductor saturable-absorber mirror

摘要

We present a novel high-power, self-starting mode-locked Ti:sapphire laser with a semiconductor saturable-absorber mirror as the starter element. This laser, whose slope efficiency is 22%, generates pulses with an average power as high as 1.7 W and a pulse width as short as 16 fs. The self-starting process is also investigated.