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首页> 外文期刊>Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine >Sorption of Th (IV) to silica as a function of pH, humic/fulvic acid, ionic strength, electrolyte type
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Sorption of Th (IV) to silica as a function of pH, humic/fulvic acid, ionic strength, electrolyte type

机译:Th(IV)对二氧化硅的吸附随pH,腐殖酸/富里酸,离子强度,电解质类型的变化

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The removal behavior of thorium (Th(IV)) has been investigated in multicomponent systems containing silica (SiO2) as the model of inorganic particles because of its widespread presence in the earth's crust and soil humic, acid (HA)/fulvic acid (FA) by batch experiments. The influence of pH from 2 to 12, ionic strength from 0.02 to 0.2 M KNO3, soil HA/FA concentration from 8.3 to 22.5mg/L, and foreign cations (Li+, Na+, K+) and anions (NO-, Cl-) on the sorption of Th(IV) onto SiO2 was also tested. The sorption isotherms 3 of Th(IV) at approximately constant pH (3.50 +/- 0.02) were determined and analyzed regressively with three kinds of sorption isotherm models, i.e., linear, Langmuir, and Freundlich models. The results demonstrated that the sorption of Th(IV) onto SiO, increased steeply with increasing pH from 2 to 4. Generally, humic substances (HSs) were shown to enhance Th(IV) sorption at low pH, but to reduce Th(IV) sorption at intermediate and high pH. It was a hypothesis that the significantly positive influence of HA/FA at pH from 2 to 4 on the sorption of Th(IV) onto SiO, was attributed to strong surface binding of HA/FA on SiO2 and subsequently the formation of ternary surface complexes such as equivalent to MO-O-HA-Th or equivalent to MO-O-FA-Th. The results also demonstrated that the sorption was strongly dependent on the concentration of HA/FA, and independent of ionic strength and foreign ions under our experimental conditions. (c) 2006 Elsevier Ltd. All rights reserved.
机译:由于containing存在于地壳和土壤腐殖酸,酸(HA)/富里酸(FA)中,因此在含有二氧化硅(SiO2)作为无机颗粒模型的多组分系统中,已研究了((Th(IV))的去除行为。 )通过批量实验。 pH值从2到12,离子强度从0.02到0.2 M KNO3,土壤HA / FA浓度从8.3到22.5mg / L,外来阳离子(Li +,Na +,K +)和阴离子(NO-,Cl-)的影响还测试了Th(IV)在SiO2上的吸附性能。测定了在近似恒定pH(3.50 +/- 0.02)下Th(IV)的吸附等温线3,并使用三种吸附等温线模型(线性,Langmuir和Freundlich模型)进行回归分析。结果表明,随着pH从2升高到4,Th(IV)在SiO上的吸附急剧增加。通常,腐殖质(HSs)在低pH值下可增强Th(IV)的吸附,但会降低Th(IV)。 )在中等和高pH下的吸附。有一个假设认为,pH为2至4的HA / FA对Th(IV)在SiO2上的吸附具有显着的正影响,这归因于HA / FA在SiO2上的强表面结合,随后形成了三元表面复合物例如相当于MO-O-HA-Th或相当于MO-O-FA-Th。结果还表明,在我们的实验条件下,吸附强烈依赖于HA / FA的浓度,并且与离子强度和外来离子无关。 (c)2006 Elsevier Ltd.保留所有权利。

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