机译:有效应力松弛InGaN /氮化镓使用碳纳米管发光二极管
Korea Inst Sci & Technol, Soft Innovat Mat Res Ctr, Jeonbuk 565905, South Korea;
Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea;
Wonkwang Univ, Div Microelect & Display Technol, Iksan 570749, Jeonbuk, South Korea;
Sapphire; internal quantum efficiency; high potentialsapphire substrateOutput powerStress relaxationjigs(templates)Carbon Nanotubesedge dislocationsreaction temperaturegallium nitridesBuffer layersLight emitting diodesgallium nitrate;
机译:具有InGaN / GaN超晶格和梯度组成的InGaN / GaN超晶格中间层的InGaN发光二极管的性能增强
机译:通过插入n〜+ -InGaN电子注入层和p-InGaN / GaN空穴注入层来改善InGaN / GaN MQWs发光二极管的静电放电特性
机译:GaN-Ingan-GaN屏障的起源在增强InGaN / GaN绿色发光二极管的空穴注射中
机译:Solution Processed Organic Light-Emitting Diode Array Integrated with Organic Thin-Film-Transistors
机译:TiN薄膜和InGaN / GaN点对纳米线的电子动力学
机译:柔性轻量磁性蘑菇G和类似珊瑚的MXene-Carbon Nanotube Nanotube Nanocomposites的制造
机译:InGaN light-emitting diodes with band-pass-filter-like GaN : si nanoporous structures
机译:用于激光二极管应用的GaN,InGaN和GaN / InGaN量子阱结构的mBE生长和性质