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Novel 2D B2S3 as a metal-free photocatalyst for water splitting

机译:新型2D B2S3作为水分裂的无金属光催化剂

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Metal-free semiconductors with desirable characteristics have recently gained great attention in the field of hydrogen generation. The non-metal material B2S3 has two phases, hexagonal B2S3 (h-B2S3) and orthorhombic B2S3 (o-B2S3), which compose a novel class of 2D materials. Both h-B2S3 and o-B2S3 monolayers are direct semiconductors with bandgaps of 2.89 and 3.77 eV by the Heyd-Scuserria-Ernzerhof (HSE) function, respectively. Under appropriate uniaxial strain (1%), the bandgap of h-B2S3 can be decreased to 2.8 eV. The carrier mobility can reach 1160 cm(2) V-1 s(-1), supporting the fast migration of photo-induced carriers. Most importantly, the band edges of both h-B2S3 and o-B2S3 cover the reduction and oxidation levels for water splitting. We explore the process of photocatalytic water splitting on h-B2S3 monolayers by analyzing the feasibility of the decomposition of H2O and the generation of H-2. The results indicate that the special mesoporous structure of B2S3 is helpful for photocatalytic hydrogen production. The new nanomaterial, B2S3, offers great promise as a metal-free photocatalyst due to its tunable bandgaps, its useful band edges, and its other excellent electronic properties.
机译:近年来,在制氢领域,具有理想特性的无金属半导体受到了广泛关注。非金属材料B2S3有两个相:六方B2S3(h-B2S3)和正交B2S3(o-B2S3),这两个相构成了一类新型的二维材料。h-B2S3和o-B2S3单分子膜都是直接半导体,通过Heyd-Scuseria-Ernzerhof(HSE)函数分别具有2.89和3.77 eV的带隙。在适当的单轴应变(1%)下,h-B2S3的带隙可以减小到2.8eV。载流子迁移率可达1160cm(2)V-1s(-1),支持光诱导载流子的快速迁移。最重要的是,h-B2S3和o-B2S3的带边覆盖了水分解的还原和氧化水平。通过分析H2O分解和h-2生成的可行性,我们探索了h-B2S3单分子膜上光催化分解水的过程。结果表明,B2S3特殊的介孔结构有助于光催化制氢。新型纳米材料B2S3由于其可调的带隙、有用的带边和其他优异的电子性能,有望成为无金属光催化剂。

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