Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2

摘要

5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf_(1–x )Zr_(x )O_(2) film. These results help explain the large P _(r) variation reported in the literature for Hf_(1–x )Zr_(x )O_(2)/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.]]>