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Highly Selective Photocatalytic CO2 Reduction to CH4 by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation

机译:在可见光照射下,通过球磨的立方碳化硅纳米粒子将高选择性的光催化CO2减少到CH4

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摘要

The ultimate goal of photocatalytic CO_(2) reduction is to achieve high selectivity for a single product with high efficiency. One of the most significant challenges is that expensive catalysts prepared through complex processes are usually used. Herein, gram-scale cubic silicon carbide (3C-SiC) nanoparticles are prepared through a top-down ball-milling approach from low-priced 3C-SiC powders. This facile mechanical milling strategy ensures large-scale production of 3C-SiC nanoparticles with an amorphous silicon oxide (SiO_(x )) shell and simultaneously induces abundant surface states. The surface states are demonstrated to trap the photogenerated carriers, thus remarkably enhancing the charge separation, while the thin SiO_(x) shell prevents 3C-SiC from corrosion under visible light. The unique electronic structure of 3C-SiC tackles the challenge associated with low selectivity of photocatalytic CO_(2) reduction to C_(1) compounds. In conjugation with efficient water oxidation, 3C-SiC nanoparticles can reduce CO_(2) into CH_(4) with selectivity over 90%.
机译:光催化CO_2还原的最终目标是以高效率实现对单一产物的高选择性。最重大的挑战之一是,通常使用通过复杂工艺制备的昂贵催化剂。在此,通过自上而下的球磨方法从低价3C-SiC粉末制备克级立方SiC(3C-SiC)纳米颗粒。这种简单的机械研磨策略确保了大规模生产具有非晶氧化硅(SiO_(x))壳的3C-SiC纳米颗粒,同时诱导丰富的表面状态。表面态被证明能捕获光生载流子,从而显著增强电荷分离,而薄的SiOx(x)壳防止3C-SiC在可见光下腐蚀。3C-SiC独特的电子结构解决了光催化CO_2还原为C_1化合物的低选择性问题。与高效水氧化结合,3C-SiC纳米颗粒可以将CO_2还原为CH_4,选择性超过90%。

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