Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals

摘要

The features of the orientational motion and channeling of charged particles are considered. They move in a near-surface potential well whose structure is formed by the surface plane of a crystal and by the action of the vector potential of the electric current flowing through a crystal or along a conductor, near which a nonconducting crystal is located. The width of the potential well forming the near-surface channeling mode depends on the crystal thickness and the electric current density and can vary in the range from several millimeters to a few micrometers as the current density varies in the range of 1-1000 A/cm(2). The process of near-surface channeling in the field of a plane conductor with current provides the abnormally weak deceleration of particles and can be used to transport particle beams along conductors with current over large distances. A similar axial channeling mode is characterized by the complete suppression of the scattering and deceleration of ion beams during their motion in free space along the surface of a cylindrical conductor with current.