FABRICATION OF BINARY SILICON-BASED NANOCRYSTALS BY PLASMA AND LASER-INDUCED CHEMISTRY IN SOLUTION

摘要

The capabilities of the liquid-assisted electrical discharge and laser ablation techniques with additional laser irradiation of suspension for synthesis of binary SiSn and SiGe nanocrystals have been studied. The results of the characterization of inner structure, phase composition, and morphology performed by means of optical absorption, HRTEM, Raman and FTIR techniques proved the formation of near-spherical SiGe and SiSn nanocrystals under the found optimized experimental conditions.